Semiconductor device with stacked chips and method for...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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Details

C438S110000, C438S113000, C438S117000, C438S118000, C438S458000, C438S462000

Reexamination Certificate

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07605019

ABSTRACT:
A semiconductor device includes a first semiconductor device and a second semiconductor device. Through-holes in the second semiconductor device extend from an upper side of the second semiconductor device adjacent contact pads to a bottom side of the second device. Tower contact bumps are electrically connected to contact pads of the first semiconductor device. The second semiconductor device is arranged adjacent the first semiconductor device so that the tower contact bumps are disposed within the through-holes and are electrically connected with contact pads of the second semiconductor device.

REFERENCES:
patent: 5229647 (1993-07-01), Gnadinger
patent: 5432999 (1995-07-01), Capps et al.
patent: 6577013 (2003-06-01), Glenn et al.
patent: 6908785 (2005-06-01), Kim
patent: 2004/0238933 (2004-12-01), Chen et al.
patent: 2005/0051883 (2005-03-01), Fukazawa
patent: 2006/0046468 (2006-03-01), Akram et al.
patent: 2006/0216856 (2006-09-01), Zhao

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