Semiconductor device with stabilized junction

Details Semiconductor device with stabilized junction Semiconductor device with stabilized junction

1996-12-12

2000-03-28

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257102, 257744, 257614, 257106, 438509, H01L 310296, G05F 318

Patent

active

060435488

ABSTRACT:
Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hg.sub.x Cd.sub.1-x Te where x=0.2 to 0.5 and n- or p-type zinc mercury telluride (ZMT) of the general formula Zn.sub.x Hg.sub.1-x Te where x=0.4 to 0.6. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrated within the MCT or ZMT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For a specific telluride composition, Hg.sub.0.3 Cd.sub.0.7 Te, indium is the n-type dopant of choice.

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