Semiconductor device with sprayed metal layer

Details Semiconductor device with sprayed metal layer Semiconductor device with sprayed metal layer

1983-12-22

1985-09-17

Davie, James W.

Metal fusion bonding

Process

Critical work component, temperature, or pressure

29590, 228123, 357 80, 357 81, H01L 2158, H01L 2314

Patent

active

045424012

ABSTRACT:
A semiconductor device has a sprayed metal layer formed by a method such as plasma spraying on a metal substrate of a material such as aluminum, and a semiconductor element attached to the sprayed metal layer by soldering. A sprayed insulting layer may be interposed between the sprayed metal layer and the metal substrate for electrically insulating the element from the substrate.

REFERENCES:
patent: 3290564 (1966-12-01), Wolff

Affiliated with

Also associated with

Rating

Semiconductor device with sprayed metal layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with sprayed metal layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with sprayed metal layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-372578