Semiconductor device with SOI structure and fabrication method t

Details Semiconductor device with SOI structure and fabrication method t Semiconductor device with SOI structure and fabrication method t

1995-09-21

1998-06-09

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257347, 257349, 257353, 257354, 257397, 257501, 257513, 257520, 438149, 438164, 438203, H01L 21265, H01L 3300

Patent

active

057639310

ABSTRACT:
A semiconductor device having the SOI structure is provided, which enables to reduce the size of components compared with the conventional semiconductor devices. The device contains a first insulator film formed on a semiconductor substrate, and semiconductor islands formed on the first insulator film. Each of the islands has an electronic component. The device further contains semiconductor sidewalls formed to surround the respective islands. The sidewalls are contacted with outer sides of the corresponding islands. Electrodes are formed outside the islands to be contacted with the corresponding sidewalls. A second insulator film is formed on the exposed first insulator film from the islands to laterally isolate the respective islands and the corresponding sidewalls from each other. The electronic components are electrically connected to the respective electrodes through the corresponding sidewalls. Preferably, the components provided in the islands are bipolar transistors, and the electrodes are used as collector electrodes.

REFERENCES:
patent: 4849371 (1989-07-01), Hansen et al.
patent: 5356822 (1994-10-01), Lin et al.
patent: 5371401 (1994-12-01), Kurita
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5541429 (1996-07-01), Shibib
T. Uchino et al., "15-ps ECL/74-GHz fT Si Bipolar Technology", IEEE, 1993, pp. 67-70.

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