Semiconductor device with SiO 2 film formed on side surface...

Details Semiconductor device with SiO 2 film formed on side surface... Semiconductor device with SiO 2 film formed on side surface...

2011-07-12

2011-07-12

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S627000, C257SE33025

Reexamination Certificate

active

07977701

ABSTRACT:
A GaN layer is grown on a sapphire substrate, an SiO2film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

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