Semiconductor device with silicon carbide-glass-silicon carbide

Details Semiconductor device with silicon carbide-glass-silicon carbide Semiconductor device with silicon carbide-glass-silicon carbide

1978-06-14

1979-07-17

Clawson, Jr., Joseph E.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 16, 357 49, 357 60, 427 85, 427 93, 427228, 427249, H01L 2934

Patent

active

041617436

ABSTRACT:
A semiconductor device includes a semiconductor substrate and a silicon carbide film formed in direct contact with the surface of the semiconductor substrate. The silicon carbide film may have a proper purity or include at least one element selected from the group consisting of hydrogen, oxygen, nitrogen, helium, argon or chlorine.

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A. Healy, "Integrated Semiconductor Device," IBM. Tech. Discl. Bull., vol. 8, #7, Dec. 1965, pp. 1016-1017.

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