Semiconductor device with silicon carbide epitaxial layer...

Details Semiconductor device with silicon carbide epitaxial layer... Semiconductor device with silicon carbide epitaxial layer...

2011-07-19

2011-07-19

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S328000, C257S329000, C257S339000, C257S341000, C257S342000, C257SE21054, C257SE29104

Reexamination Certificate

active

07982224

ABSTRACT:
A semiconductor device includes: a semiconductor substrate of silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type, which has been grown on the principal surface of the substrate; well regions of a second conductivity type, which form parts of the silicon carbide epitaxial layer; and source regions of the first conductivity type, which form respective parts of the well regions. A channel epitaxial layer of silicon carbide is grown over the well regions and source regions of the silicon carbide epitaxial layer. A portion of the channel epitaxial layer located over the well regions functions as a channel region. A dopant of the first conductivity type is implanted into the other portions and of the channel epitaxial layer except the channel region.

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