Semiconductor device with Shottky junction

Details Semiconductor device with Shottky junction Semiconductor device with Shottky junction

1993-04-30

1995-08-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257473, 257477, 257476, 257484, H01L 2948

Patent

active

054382181

ABSTRACT:
A semiconductor device is provided having a first semiconductor region comprising an n-type semiconductor and a second semiconductor region of an n-type semiconductor having a higher resistivity than the first semiconductor region. An insulation film is provided adjacent to the semiconductor region having an aperture therein, and an electrode region is provided in the aperture. A third semiconductor region comprising a p-type semiconductor is provided at a junction between the insulation film and the electrode region. The electrode comprises a monocrystalline metal and constitutes a Schottky junction with the semiconductor region. An ohmic electrode comprising aluminum is arranged on the electrode region.

REFERENCES:
patent: 4665414 (1987-05-01), Koeneke et al.
patent: 4952992 (1990-08-01), Blanchard
patent: 5040034 (1991-08-01), Murakami et al.
Reidenbergs, "lateral PNP Transistor with Schohky Barrier Collector," IBM technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, p. 3248.
Malaviya, "High-Speed PNP Transistors," IBM Technical Disclosure Bulletin, vol. 18, No. 3, Aug. 1975, pp. 735-736.
Anantha et al, "Method of Fabrication of Schohky Collector PNP," IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, pp. 3630-3631.
Daughton, "Vertical Schohky Pad ," IBM Technical Disclosure Bulletin, vol. 15, No. 1, Jun. 1972, p. 261.
Journal of Vacuum Science and Technology, Part B, vol. 1, No. 3, Jul.-Sep. 1983, pp. 819-824, C. Barret, et al., "On the dependence of Schottky barrier height and interface states upon initial semiconductor surface parameters in GaAs (001)/Al Junctions".
1988 Symposium On VLSI Technology Digest Of Technical Papers, 10th-13th May 1988, pp. 99-100; Ohmi, T., et al.: "Copper ULSI Metallization by Low Kinetic-Energy Particle Process".
Journal of Vacuum Science & Technology B, vol. 7, No. 4, Jul./Aug. 1989, pp. 737-741, Chambers, S. A.: "Molecular-Beam Epitaxial Growth Of NiAl On GaAs(001)".

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