Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2007-03-06
2007-03-06
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S660000
Reexamination Certificate
active
10784268
ABSTRACT:
The semiconductor device comprises: an interlayer insulating film405and an insulating film409, interconnect lines407, 408aand408bembedded in the insulating film409, circuit elements410aand410bmounted on the insulating film409, a packaging film415formed so as to cover the circuit elements410aand410b, and an electroconductive shielding film416formed so as to cover the packaging film415. The interconnect lines408aand408bare configured to be electrically coupled to the shielding film416.
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Office Action for corresponding Japanese Patent Application 2004-064828 (which claims priority of JP2003-068145).
Pham Hoai
Sanyo Electric Co,. Ltd.
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