Semiconductor device with semiconductor elements formed in a lay

Details Semiconductor device with semiconductor elements formed in a lay Semiconductor device with semiconductor elements formed in a lay

1998-05-18

2000-08-15

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257636, 257637, 257641, H01L 2906, H01L 2358

Patent

active

061040819

ABSTRACT:
A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.

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patent: 5087585 (1992-02-01), Hayashi
patent: 5289031 (1994-02-01), Watanabe et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5517047 (1996-05-01), Linn et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5770487 (1998-06-01), Maas et al.
patent: 5786638 (1998-07-01), Yamaha

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