Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-02-15
2009-12-15
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S690000, C257S692000, C257S734000, C257S741000, C257S773000, C257S775000, C257S754000, C257S786000, C257S798000, C977S720000, C977S721000, C977S722000, C977S762000, C977S763000, C977S766000, C977S784000, C977S932000, C977S936000, C977S937000, C977S938000, C977S963000
Reexamination Certificate
active
07633148
ABSTRACT:
A plurality of conductive pads (2) are formed on a mounting surface of a mounting board. Conductive pads (11) are formed on a principal surface of a semiconductor chip (10) at positions corresponding to the conductive pads of the mounting board, when the principal surface faces toward the mounting board. A plurality of conductive nanotubes (12) extend from the conductive pads of one of the mounting board and the semiconductor chip. A press mechanism (3) presses the semiconductor chip against the mounting board and restricts a position of the semiconductor chip on the mounting surface to mount the semiconductor chip on the mounting board, in a state that tips of the conductive nanotubes are in contact with the corresponding conductive pads not formed with the conductive nanotubes.
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M. Nihei, et al.; “Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer;”Jpn. J. Appl. Phys.; vol. 42 Part 2; No. 6B; Jun. 15, 2003; pp. L 721-L 723 (2 Sheets.)/Discussed in the specification.
Awano Yuji
Iwai Taisuke
Mizukoshi Masataka
Nakamura Tomoji
Fujitsu Limited
Fujitsu Patent Center
Soward Ida M
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