Semiconductor device with semiconductor chip formed by using...

Details Semiconductor device with semiconductor chip formed by using... Semiconductor device with semiconductor chip formed by using...

2006-06-06

2006-06-06

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Encapsulated

C257S625000, C257S666000

Reexamination Certificate

active

07057298

ABSTRACT:
A switching chip using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink, an insulating substrate and a conductive plate, with a first conductive layer sandwiched in between. Further, a diode chip having a smaller area than a cathode electrode and using a wide gap semiconductor as the base material is located on the cathode electrode which has a smaller area than an anode electrode, with a second conductive layer sandwiched in between. A closed container encloses every structural component except an exposed portion of a bottom surface in the interior space.

REFERENCES:
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patent: 5931222 (1999-08-01), Toy et al.
patent: 6576497 (2003-06-01), Ahiko et al.
patent: 6858467 (2005-02-01), Moden
patent: 6891265 (2005-05-01), Mamitsu et al.
patent: 2003/0020161 (2003-01-01), Saitoh et al.
patent: 11-274482 (1999-10-01), None

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