Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2005-03-01
2005-03-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S675000, C257S706000, C257S707000, C257S796000, C438S122000, C438S123000, C438S125000
Reexamination Certificate
active
06861730
ABSTRACT:
A switching chip (101) using silicon as the base material is located on the upper surface of a cooling mechanism formed of a heat sink (115), an insulating substrate (114) and a conductive plate (108), with a first conductive layer (109A) sandwiched in between. Further, a diode chip (102) having a smaller area than a cathode electrode (103) and using a wide gap semiconductor as the base material is located on the cathode electrode (103) which has a smaller area than an anode electrode (105), with a second conductive layer (109B) sandwiched in between. A closed container (117) encloses every structural component except an exposed portion of a bottom surface (115BS) in the interior space.
REFERENCES:
patent: 5931222 (1999-08-01), Toy et al.
patent: 6576497 (2003-06-01), Ahiko et al.
patent: 20030020161 (2003-01-01), Saitoh et al.
patent: 11-274482 (1999-10-01), None
Hirao Masayoshi
Matsuo Kazushige
Satou Katsumi
Tooi Shigeo
Mitsubishi Denki & Kabushiki Kaisha
Nelms David
Tran Long
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