Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive...
Reexamination Certificate
2005-09-30
2009-11-24
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
C438S197000, C438S700000, C257SE21580, C257SE21400, C257SE21550, C257SE21231, C257SE21248, C257SE21314
Reexamination Certificate
active
07622358
ABSTRACT:
A method for forming semi-insulating portions in a semiconductor substrate provides depositing a hardmask film over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The hardmask is patterned creating openings through which charged particles pass and enter the substrate during an implantation process. The semi-insulating portions may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.
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Tang et al., “The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips”, 2003 IEEE, IEDM, pp. 673-676.
Cheng Hsu Chen
Lee Chuan-Ying
Lin Wen-Chin
Tang Denny
Duane Morris LLP
Nhu David
Taiwan Semiconductor Manufacturing Co. Ltd.
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