Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-03-05
2000-06-06
Niebling, John F.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257755, 257758, 257770, 438279, H01L 2348
Patent
active
06072241&
ABSTRACT:
A method of manufacturing a semiconductor device having a self-aligned contact hole includes a step of forming first gate electrode structures having a high pattern density on a gate insulating film in a first area of a semiconductor substrate and second gate electrode structures having a low pattern density on the gate insulating film in a second area, a step of forming first and second insulating films having different etching characteristics over the semiconductor substrate, a step of anisotropically etching the first and second insulating films in the second area by masking the first area to form side spacers on the second gate electrode structures, a step of forming an interlayer insulating film over the semiconductor substrate, and a step of forming in a self-alignment manner an opening reaching the source/drain region in the first area, by using the second insulating film as an etching stopper. This method allows to reliably form a self-aligned contact hole even if the pattern density is high.
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Fujitsu Limited
Hack Jonathan
Niebling John F.
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