Semiconductor device with selective nitride layer over channel s

Details Semiconductor device with selective nitride layer over channel s Semiconductor device with selective nitride layer over channel s

1981-05-26

1984-11-27

Clawson, Jr., Joseph E.

357 34, 357 35, 357 51, 357 54, H01L 2934

Patent

active

044853939

ABSTRACT:
A semiconductor device comprises a semiconductor body of one conductivity type, at least one semiconductor region of the opposite conductivity type formed in the semiconductor body and having a surface flush with the surface of the semiconductor body, an insulative or semi-insulative film formed on the semiconductor body or semiconductor region through a passivation layer and having a fixed charge, positive or negative, and an electrode metal layer connected to at least one of the semiconductor body and region and formed locally on the film directly or through a passivation layer. The semiconductor body or region is of N conductivity type when the film has a positive fixed charge and of P conductivity type when the film has a negative fixed charge.

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