Semiconductor device with Schottky barrier

Details Semiconductor device with Schottky barrier Semiconductor device with Schottky barrier

1974-11-26

1976-01-13

Grimm, Siegfried H.

357 52, 357 67, 357 71, H01L 2946, H01L 2948

Patent

active

039328805

ABSTRACT:
A nickel-palladium alloy in the form of a layer is contacted by one portion of one main face of a semiconductor substrate to form a Schottky barrier. A gold layer is disposed upon the nickel-palladium layer and an electrically insulating film is disposed on the remaining portion of the one main substrate face to contact and surround both layers. The film has a thickness equal to or greater than the sum of thicknesses of both layers.

REFERENCES:
patent: 3636417 (1972-01-01), Kimura
patent: 3699408 (1972-10-01), Shinoda et al.
patent: 3775200 (1973-11-01), DE Nobel et al.

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