Semiconductor device with saturable absorbing layer

Details Semiconductor device with saturable absorbing layer Semiconductor device with saturable absorbing layer

2005-02-15

2005-02-15

Harvey, Mingun Oh (Department: 2828)

Coherent light generators

Particular beam control device

Q-switch

C372S043010, C372S045013, C372S046012, C372S050121

Reexamination Certificate

active

06856631

ABSTRACT:
A self-pulsating semiconductor laser device includes a semiconductor substrate of the first conductivity type, a first cladding layer of the first conductivity type formed on the substrate and an active layer formed on the first cladding layer. A second cladding layer of a second conductivity type is formed on the active layer. A saturable absorbing layer is formed on at least portions of at least one of the first cladding layer and the second cladding layer. The saturable absorbing layer has a band gap energy either approximately the same as, or slightly smaller than, the active layer.

REFERENCES:
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patent: 6118800 (2000-09-01), Kidoguchi et al.
patent: 6121634 (2000-09-01), Saito et al.
patent: 6358822 (2002-03-01), Tomomura
patent: 6456640 (2002-09-01), Okumura
patent: 9283840 (1997-10-01), None
patent: 9331098 (1997-12-01), None

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