Semiconductor device with refractory metal element

Details Semiconductor device with refractory metal element Semiconductor device with refractory metal element

1997-04-18

2000-01-11

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257192, 257280, 257282, 257283, H01L 2980, H01L 310328, H01L 31112

Patent

active

060139269

ABSTRACT:
A semiconductor device includes a self-aligned refractory metal constituent in a recess in a semiconductor substrate and having the same plane pattern as a bottom surface of the recess. The width of the constituent is determined by the plane pattern of the recess and, accordingly, the pattern width of the constituent is easily controlled by the plane pattern of the recess.

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patent: 5742082 (1998-04-01), Tehrani et al.
patent: 5786610 (1998-07-01), Nakanishi
patent: 5888859 (1999-03-01), Oku et al.
Sasaki et al., "Reliability of AlInAs/InGaAs/InP HEMT Ohmic Contacts", IPRM, 1995, pp. 745-748.
Nguyen et al., "50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors", IEEE Transactions on Electron Devices, vol. 39, No. 9, 1992, pp. 2007-2014.

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