Semiconductor device with redundancy circuit and means for activ

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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3072021, 307449, 307469, H03K 19003

Patent

active

047913193

ABSTRACT:
A semiconductor device such as a DRAM with many signal line circuits is also provided with a redundancy circuit and is so structured that when one of the signal line circuits is defective and the fuse contained by such a defective signal line circuit is cut off to inactivate it, an input signal which would select the inactivated signal line circuit will automatically select the redundancy circuit.

REFERENCES:
patent: 4441170 (1984-04-01), Folmsbee et al.
patent: 4546455 (1985-10-01), Iwahashi et al.
patent: 4613959 (1986-09-01), Jiang
patent: 4641285 (1987-02-01), Sasaki et al.
patent: 4658379 (1987-04-01), Fujishima et al.
patent: 4691300 (1987-09-01), Pelley III et al.

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