Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-07-09
1995-04-25
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257280, 257631, 257649, H01L 29161
Patent
active
054101670
ABSTRACT:
A silicon nitride film 2 is formed on a GaAs substrate 1 and patterned to selectively expose the GaAS substrate surface in uniformly distributed areas having a width of not greater than 1 .mu.m. A non-doped GaAs buffer layer is grown on the GaAs substrate to completely cover the silicon nitride film. Then, a semiconductor multilayer structure including a non-doped GaAs layer is formed on the non-doped GaAs buffer layer. When a semiconductor integrated circuit device is manufactured using this semiconductor substrate, side gate effect can be effectively reduced due to the existence of the silicon nitride pattern and the buffer layer.
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Bowers Courtney A.
Fujitsu Limited
James Andrew J.
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