Semiconductor device with reduced leakage protection diode

Details Semiconductor device with reduced leakage protection diode Semiconductor device with reduced leakage protection diode

2005-01-26

2010-02-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S244000, C257S274000, C257S754000, C257SE27062

Reexamination Certificate

active

07663164

ABSTRACT:
A protection diode is used in a CMOS integrated circuit device to direct charged particles to benign locations and prevent damage to the device. The protection diode includes a well region of a first conductivity type formed in a surface of a semiconductor substrate, a heavily doped P-type impurity region disposed within the well region, a heavily doped N-type impurity region disposed within the well region and an STI structure interposed therebetween. A top surface of the STI structure extends above the surface. A silicide resistant block-out layer is formed over the STI structure and extends laterally beyond the STI structure, covering any counterdoped sections that may undesirably be formed in the substrate adjacent the STI structure during implantation operations. The method for forming the structure utilizes processing operations and materials used in the formation of the CMOS integrated circuit device.

REFERENCES:
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patent: 6093593 (2000-07-01), Jang
patent: 6277723 (2001-08-01), Shih et al.
patent: 6291281 (2001-09-01), Wang et al.
patent: 6294448 (2001-09-01), Chang et al.
patent: 6507090 (2003-01-01), Hu et al.
VLSI Technology, 1983, p. 456, McGraw-Hill, U.S.
ULSI Technology, International Editions 1996, p. 396, The McGraw-Hill Companies, Inc., Singapore.

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