Semiconductor device with reduced leakage current

Details Semiconductor device with reduced leakage current Semiconductor device with reduced leakage current

1996-09-03

1997-09-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257640, 257649, H01L 2358

Patent

active

056684037

ABSTRACT:
The present invention provides a method of manufacturing a semiconductor device improved so that stress at a boundary between a semiconductor substrate and an element isolation oxide film can be relaxed. In the method, the surface of a semiconductor substrate is oxidized with a nitride film used as a mask to form an element isolation oxide film in the surface of semiconductor substrate. After removing an underlay oxide film and nitride film, semiconductor substrate is heat-treated at a temperature of 950.degree. C. or more. An element is formed in an element region.

REFERENCES:
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4564394 (1986-01-01), Bussmann
patent: 4907063 (1990-03-01), Okada et al.
patent: 5236862 (1993-08-01), Pfiester et al.
patent: 5256593 (1993-10-01), Iwai
patent: 5316965 (1994-05-01), Philipossian et al.
patent: 5358893 (1994-10-01), Yang et al.
patent: 5387540 (1995-02-01), Poon et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5434109 (1995-07-01), Geissler et al.
patent: 5521120 (1996-05-01), Nulman et al.
S. Wolf, "A Review of IC Isolation Technologies-Part 4" US-period.: Solid State Technology, Oct. 1992, pp. 53-61, (pp. 55 and 57 contain advertisements).
S. Ratanaphanyarat et al., "A Self-Aligned Nitrogen Implantation Process (SNIP) to Minimize Field Oxide Thinning Effect in Submicrometer LOCOS," US period. IEEE Transactions on Electron Devices, vol. 37, No. 9, Sep. 1990, pp. 1948-1958.
"Improved Hot-Carrier Immunity in CMOS Analog Device With N.sub.2 O-Nitrided Gate Oxides", G.Q. Lo et al., IEEE Electron Device Letters, vol. 13, No. 9, Sep. 1992, pp. 457-459.
"Density Relaxation of Silicon Dioxide on (100) Silicon During Thermal Annealing", K. Taniguchi et al., J. Appl. Phys. 67 (5), Mar. 1, 1990, pp. 2195-2198.

Affiliated with

Also associated with

Rating

Semiconductor device with reduced leakage current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with reduced leakage current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with reduced leakage current will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-220618