Semiconductor device with reduced interconnect capacitance

Details Semiconductor device with reduced interconnect capacitance Semiconductor device with reduced interconnect capacitance

2007-01-30

2007-01-30

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S774000

Reexamination Certificate

active

10812959

ABSTRACT:
A semiconductor device has interconnecting lines disposed side by side in a dielectric film. Mutually adjacent pairs of interconnecting lines are separated by a substantially constant distance from top to bottom, but the width of each interconnecting line varies from top to bottom. For example, the interconnecting lines may have T-shaped or trapezoidal cross sections, interconnecting lines having wide tops alternating with interconnecting lines having wide bottoms. These cross-sectional shapes can be formed by simple fabrication processes. Since the facing sides of mutually adjacent interconnecting lines do not form mutually parallel vertical planes and therefore do not function as parallel plate electrodes, the interconnect capacitance is reduced.

REFERENCES:
patent: 6469392 (2002-10-01), Park et al.
patent: 02-001917 (1990-01-01), None
patent: 04023327 (1992-01-01), None
patent: 05-109912 (1993-04-01), None
patent: 06-204350 (1994-07-01), None
patent: 09-064182 (1997-03-01), None

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