Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-04-29
2011-11-29
Williams, A O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23142, C257SE21409, C257SE21584, C257SE23161, C257SE21577, C257S773000, C257S774000, C257S680000, C257S762000, C257S761000, C257S758000
Reexamination Certificate
active
08067836
ABSTRACT:
A semiconductor device includes an insulating film including oxygen formed over a semiconductor substrate, a recess formed in the insulating film, a refractory metal film formed on the inner wall of the recess, a metal film including copper, manganese, and nitrogen formed on the refractory metal film, and a copper film formed on the metal film to fill in the recess.
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Korean Notice of Preliminary Rejection, English-language translation, mailed Jan. 31, 2011 for corresponding Korean Application No. 10-2009-0045018.
Haneda Masaki
Nakao Yoshiyuki
Ohtsuka Nobuyuki
Shimizu Noriyoshi
Sunayama Michie
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Williams A O
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