Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-06-07
1998-09-15
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 64, 257 65, 257 66, 257 70, 257 75, 257351, H01L 2904, H01L 2912, H01L 27108, H01I 31036
Patent
active
058083219
ABSTRACT:
One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600.degree. C. or less. The crystallization develops from a region where the element has been introduced in a direction parallel to a substrate. An active region of a semiconductor device is formed in a portion of the crystallized semiconductor layer in such a manner that the relation between the crystal growth direction and the direction in which the electric current of the device is selected in accordance with a desired mobility of the active region.
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Mitanaga Akiharu
Ohtani Hisashi
Teramoto Satoshi
Ferguson Jr. Gerald J.
Saadat Mahshid D.
Semiconductor Energy Laboratory Co,. Ltd.
Soward Ida M.
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