Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Reexamination Certificate
2011-08-16
2011-08-16
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
C257SE23179, C438S401000, C438S455000, C438S456000, C438S457000, C438S458000, C438S459000, C438S462000, C250S559440, C702S150000
Reexamination Certificate
active
07999400
ABSTRACT:
A semiconductor device and a method for manufacturing such semiconductor device are provided. Specifically, in the semiconductor manufacture, a recessed alignment mark is formed on a front plane of a high distortion point glass substrate as a target for alignment for bonding, and the recessed alignment mark is permitted to have a shape which extends to an external side of the semiconductor device. Thus, excellent bonding between the high distortion point glass substrate and the semiconductor device can be provided, and at the same time, since the recessed alignment mark is not sealed, the bonding state can be maintained even when the high distortion point glass substrate is exposed under the high temperature condition after bonding the semiconductor device.
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Notification of Reasons for Refusal mailed Apr. 19, 2011 in Japanese Application No. 2007-510328, with English Translation (6 pages).
Itoga Takashi
Ogawa Yasuyuki
Dulka John P
Nixon & Vanderhye P.C.
Richards N Drew
Sharp Kabushiki Kaisha
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