Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Patent
1993-02-23
1994-05-03
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
257155, 257172, 257331, 257914, H01L 2900
Patent
active
053090020
ABSTRACT:
Between electrodes (9) and (10) are formed a p.sup.+ substrate (2), an n.sup.- epitaxial layer (1) having a protruding portion (3), an n.sup.+ diffusion region (4) and p.sup.+ diffusion regions (13). Control electrodes (6) are formed on insulating films (5) on opposite sides of the protruding portion (3) and n.sup.+ diffusion region (4). The potential at the control electrodes (6) is increased or decreased with the potential at an electrode (10) increased relative to an electrode (9) to generate potential barrier or conductivity modulation in the n.sup.- epitaxial layer (1), whereby a semiconductor device turns off or on. Introduced holes are drawn through the p.sup.+ diffusion regions (13) when the semiconductor device turns off, to provide a small resistance and a short distance when the holes are drawn without changes in the area of the n.sup.+ diffusion region (4). This permits the semiconductor device to have small switching loss and high switching speed with a low ON-voltage.
REFERENCES:
patent: 4772926 (1988-09-01), Nishizawa et al.
patent: 4841345 (1989-06-01), Majumdar
patent: 4862239 (1989-08-01), Broich et al.
patent: 4963950 (1990-10-01), Chang et al.
patent: 5091766 (1992-02-01), Terashima
patent: 5155569 (1992-10-01), Terashima
patent: 5194394 (1993-03-01), Terashima
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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