Semiconductor device with protruding portion

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257155, 257172, 257331, 257914, H01L 2900

Patent

active

053090020

ABSTRACT:
Between electrodes (9) and (10) are formed a p.sup.+ substrate (2), an n.sup.- epitaxial layer (1) having a protruding portion (3), an n.sup.+ diffusion region (4) and p.sup.+ diffusion regions (13). Control electrodes (6) are formed on insulating films (5) on opposite sides of the protruding portion (3) and n.sup.+ diffusion region (4). The potential at the control electrodes (6) is increased or decreased with the potential at an electrode (10) increased relative to an electrode (9) to generate potential barrier or conductivity modulation in the n.sup.- epitaxial layer (1), whereby a semiconductor device turns off or on. Introduced holes are drawn through the p.sup.+ diffusion regions (13) when the semiconductor device turns off, to provide a small resistance and a short distance when the holes are drawn without changes in the area of the n.sup.+ diffusion region (4). This permits the semiconductor device to have small switching loss and high switching speed with a low ON-voltage.

REFERENCES:
patent: 4772926 (1988-09-01), Nishizawa et al.
patent: 4841345 (1989-06-01), Majumdar
patent: 4862239 (1989-08-01), Broich et al.
patent: 4963950 (1990-10-01), Chang et al.
patent: 5091766 (1992-02-01), Terashima
patent: 5155569 (1992-10-01), Terashima
patent: 5194394 (1993-03-01), Terashima

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with protruding portion does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with protruding portion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with protruding portion will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2116299

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.