Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-11-28
1988-07-26
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 234, 357 238, 357 28, 357 41, 357 51, 357 59, 307310, 323284, H01L 2978, H01L 2356, H01L 3100, G05F 140
Patent
active
047604344
ABSTRACT:
A semiconductor substrate has a power region and a control region. The control region is located in the center portion of the substrate, and the power region surrounds the control region and is separated therefrom. A vertical type, MOS transistor, i.e., an active semiconductor element, is formed on the power region. An insulation film is formed on part of the control region. A polycrystalline silicon diode, which functions as a heat-sensitive element, is formed on the insulation film. A control section comprising a lateral type, MOS transistor is also formed on the control region. The lateral type, MOS transistor is connected to receive a signal form the polycrystalline silicon diode. Further, a polycrystalline silicon resistor, which determines a circuit constant, is formed on the insulation film. The MOS transistor protects the active semiconductor element in response to a signal supplied from the heat-sensitive element showing that the temperature of the semiconductor substrate has risen above a predetermined value. For example, the active semiconductor element may be disabled until the detected temperature drops below a predetermined value.
REFERENCES:
patent: 4198581 (1980-04-01), Ahmed
patent: 4492974 (1985-01-01), Yoshida et al.
Self-Thermal Protecting Power MOSFET's; Y. Tsuzuki, M. Yamaoka et al., Nippondenso Co., Ltd., Japan, Eighteenth Annular Power Electronics Specialists Conference, Jun. 21-26, 1987.
"The Design of a High Power Solid State Automotive Switch in CMOS-VDMOS Technology", IEEE Power Electronics Specialists Conference, pp. 229-233, Jun. 1985.
Tsuzuki Yukio
Yamaoka Masami
Edlow Martin H.
Featherstone D.
Nippondenso Co. Ltd.
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