Semiconductor device with protective functions

Details Semiconductor device with protective functions Semiconductor device with protective functions

2005-08-16

2005-08-16

Jackson, Stephen W. (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

C361S058000, C361S106000

Reexamination Certificate

active

06930870

ABSTRACT:
The semiconductor device is inserted between a power source and a load. A current flowing between an external drain terminal D and an external source terminal S is controlled in accordance with a control voltage applied between an external gate terminal G and the external source terminal S. In addition, the semiconductor device has a main MOSFET1and a detecting MOSFET2each of which is inserted between the external drain terminal D and the external source terminal S, a protective circuit3which protects the main MOSFET1by a protective transistor5when the abnormality is detected thereby, and an impedance element4inserted between the protective MOSFET5, and a junction connecting the external gate terminal G to a gate electrode of the detecting MOSFET2.

REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
patent: 5285095 (1994-02-01), Toyoda
patent: 5303110 (1994-04-01), Kumagai
patent: 5408102 (1995-04-01), Okumura
patent: 1028467 (2000-08-01), None

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