Semiconductor device with pressure electrical contacts having ir

Details Semiconductor device with pressure electrical contacts having ir Semiconductor device with pressure electrical contacts having ir

1976-12-13

1978-08-01

James, Andrew J.

357 65, 357 68, 357 81, 357 72, H01L 2342, H01L 2344, H01L 2346

Patent

active

041046765

ABSTRACT:
The present invention is directed to a semiconductor device comprising a body of semiconductor material having at least one p-n junction therein. The body of semiconductor material has opposed, flat, substantially parallel main faces and an edge portion extending between the two main faces. The p-n junction is exposed at the edge portion of the body. Metal electrodes are affixed to at least a portion of the two faces of the body of semiconductor material. A layer of protective material covers the edge portion, the metal electrodes, and any exposed portions of the two main faces of the body. Electrical contacts made to the body of semiconductor material by lead electrodes in compression bonded contact with the metal electrodes and in some cases with at least a portion of the main faces of the body of semiconductor material. The surface of the lead electrodes in contact with the metal electrodes and in some instances the main faces of the semiconductor body is comprised of a plurality of lands and grooves.

REFERENCES:
patent: 3291578 (1966-12-01), Fahey
patent: 3387191 (1968-06-01), Fishman et al.
patent: 3480842 (1969-11-01), Scharli
patent: 3702975 (1972-11-01), Miller
patent: 3706915 (1972-12-01), Lootens et al.
patent: 3858096 (1974-12-01), Kuhrt et al.
patent: 3860949 (1975-01-01), Stoeckert et al.

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