Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1987-03-30
1989-05-23
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307491, 307360, 323311, G05F 316
Patent
active
048333417
ABSTRACT:
An integrated semiconductor device is disclosed which has a highly-integrated circuit formed on a substrate. A constant voltage generator is connected to the integrated circuit, for receiving an externally-supplied d.c. power supply voltage to produce a regulated d.c. voltage, the potential level of which is lower than the external power supply voltage and remains substantially constant irrespective of the external power supply voltage. A mode-change controller is connected in parallel with the voltage generator, for supplying the output d.c. voltage of the voltage generator to the integrated circuit as an internal power supply voltage in a normal operation mode. When the device is subjected to an accelerated test using an increased power supply voltage, a switching transistor is rendered conductive under the control of a control circuit, thereby allowing the external power supply voltage to be directly applied to the integrated circuit.
REFERENCES:
patent: 3639779 (1972-02-01), Garrigus
patent: 4691123 (1987-09-01), Hashimoto
K. Itoh et al.: "An Experimental 1Mb Dram with On-Chip Voltage Limiter", ISSCC Dig. Tech. Papers, p. 282 (1984).
Furuyama Tohru
Watanabe Yohji
Callahan Timothy P.
Kabushiki Kaisha Toshiba
Miller Stanley D.
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