Semiconductor device with polycrystalline silicon active region

Details Semiconductor device with polycrystalline silicon active region Semiconductor device with polycrystalline silicon active region

1991-05-17

1992-11-10

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material containing...

257 66, H01L 2712, H01L 21324

Patent

active

051628929

ABSTRACT:
A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm.sup.2 /V sec can be achieved in the preferred construction. The semicondcutor device can be fabricated in the form of IC chips.

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H. Hayashi, T. Noguchi, and T. Oshima, "Polysilicon Super-Thin-Film Transistor" (SFT), Japanese.
Journal of Applied Physics, vol. 23, No. 11, Nov. 1984, pp. L819-L820.

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