Semiconductor device with polycrystalline silicon active region

Details Semiconductor device with polycrystalline silicon active region Semiconductor device with polycrystalline silicon active region

1987-09-11

1992-12-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 67, 257 69, 257369, H01L 2701, H01L 2702, H01L 2712, H01L 2904

Patent

active

051722038

ABSTRACT:
A polycrystalline silicon layer is used to allow simultaneous fabrication of both N- and P-type MOSFET's on a common channel layer during integrated circuit fabrication. The polysilicon layer is between 20 .ANG. and 750 .ANG. thick, and preferably between 200 .ANG. and 500 .ANG. thick. These dimensions afford the polysilicon layer the high effective mobility, low threshold voltage and low leakage current characteristics, especially if the vapor-deposited polysilicon layer is annealed and/or ion implanted with Si.sup.+ or Ge.sup.+ after deposition. Application of the polysilicon layer over adjoining insulating and P-type semicondcuting areas allows the single polysilicon layer to serve as active terminals and channels of both conductivity types of MOS transistors without intervening insulating or semiconducting layers. Deposition of the polysilicon layer in direct contact with a single-crystal substrate enhances the beneficial electrical properties of the polysilicon layer, especially if the polysilicon layer is annealed following deposition.

REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 3290569 (1966-12-01), Weimer
patent: 3304469 (1967-02-01), Weimer
patent: 3514676 (1970-05-01), Fa
patent: 3549411 (1970-12-01), Bean et al.
patent: 4365264 (1982-12-01), Mukai et al.
patent: 4545112 (1985-10-01), Holmberg et al.
patent: 4625224 (1986-11-01), Nakagawa
patent: 4754314 (1988-06-01), Scott et al.

Affiliated with

Also associated with

Rating

Semiconductor device with polycrystalline silicon active region does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with polycrystalline silicon active region , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with polycrystalline silicon active region will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2097660