Semiconductor device with plated heat sink and partially plated

Details Semiconductor device with plated heat sink and partially plated Semiconductor device with plated heat sink and partially plated

1999-04-08

2000-12-05

Williams, Alexander O.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257730, 257712, 257731, 257707, 257797, 257732, 257713, H01L 2334, H01L 21304, H01L 2302

Patent

active

06157077&

ABSTRACT:
A semiconductor device includes a semiconductor substrate having front and back surfaces and a heat dissipating metal layer on the back surface. The semiconductor substrate includes side surfaces covering a metal layer. The side surfaces are outwardly tapered and include a pair of upper side surfaces and lower side surfaces. A protrusion bearing semiconductor elements extends from the front surface of the substrate in a direction opposite the back surface of the substrate. The side surfaces of the protrusion are not metal covered. Thus, short-circuiting between wires connected to the semiconductor elements and the metal layer covering the side surfaces is avoided.

REFERENCES:
patent: 3792730 (1974-02-01), Andersson
patent: 5343075 (1994-08-01), Nishino
patent: 5381042 (1995-01-01), Lerner et al.
patent: 5872396 (1999-02-01), Kosaki
patent: 5872397 (1999-02-01), Diffenderfer et al.

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