Semiconductor device with pillar-shaped contact layer

Details Semiconductor device with pillar-shaped contact layer Semiconductor device with pillar-shaped contact layer

1994-11-23

1997-02-18

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257382, 257385, 257754, 257756, H01L 2940, H01L 2704

Patent

active

056043821

ABSTRACT:
A semiconductor device comprises a first conductive layer, an insulating layer formed on the first conductive layer, a plurality of contact holes formed through the insulating layer, a second conductive layer consisting of a plurality of pillar-shaped contacts each respectively formed in a corresponding one of the contact holes, the pillar-shaped contacts each respectively having a projecting portion projecting above the insulating layer, and a third conductive layer consisting of a plurality of conductive portions each respectively formed on the projecting portion of a corresponding one of the pillar-shaped contacts in a selectively growing manner.

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patent: 5444022 (1995-08-01), Gardner

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