Semiconductor device with p-n junction based on dopant profile i

Details Semiconductor device with p-n junction based on dopant profile i Semiconductor device with p-n junction based on dopant profile i

1993-04-14

1995-05-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257102, 257744, H01L 310296

Patent

active

054122422

ABSTRACT:
Self stabilizing concentration profiles are achieved in solids. More particularly, semiconductor devices are made from n- or p-type mercury cadmium telluride (MCT) of the general formula Hg.sub.x Cd.sub.1-x Te and especially using Hg.sub.0.3 Cd.sub.0.7 Te. Silver, incorporated as a doping impurity or applied as an evaporated spot electromigrates within the MCT to create one or more p-n junctions, usually under the influence of a pulsed positive bias. The resulting concentration profiles of silver and opposing internal electric fields of the p-n junctions achieve a balancing equilibrium that preserves and maintains the stability of the concentration profiles. For the specific telluride composition, indium is the n-type dopant of choice.

REFERENCES:
patent: 4647711 (1987-03-01), Basol et al.
patent: 4679063 (1987-07-01), White
patent: 4735662 (1988-04-01), Szabo et al.

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