Semiconductor device with optimal distance between emitter and t

Details Semiconductor device with optimal distance between emitter and t Semiconductor device with optimal distance between emitter and t

1990-07-24

1992-04-28

Jackson, Jr., Jerome

Fishing, trapping, and vermin destroying

357 49, 437 31, H01L 2972

Patent

active

051092638

ABSTRACT:
A vertical bipolar transistor arrangement in which the distance between the emitter and the isolation region is kept within a range determined by the sum of emitter depth and base width (i.e., the thickness of the base in the depth direction). This keeps the carriers given by the emitter from getting trapped inside, thereby preventing the cut-off frequency from dropping.

REFERENCES:
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4641416 (1987-02-01), Iranmanesh et al.
patent: 4829015 (1989-05-01), Schaber et al.
patent: 4933733 (1990-06-01), Iranmanesh et al.
patent: 4963957 (1990-10-01), Ohi et al.
Kikuchi et al IEDM Dec. 1986 pp. 420-423 "A High-Speed Bipolar LSI . . . Technology".

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