Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1981-03-24
1984-10-09
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 41, 357 43, 357 23, 307304, H01L 2702
Patent
active
044764790
ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the substrate. In the layer are formed a first semiconductor region of the first conductivity type, having a low impurity concentration and formed deep; and a second semiconductor region in a surface area of the layer including the surface of the first semiconductor region. The second region has an impurity concentration higher than that of the first region and formed shallower than it. A power source voltage terminal is connected to the substrate and supplies a voltage applied thereto to the second region through the substrate and the layer.
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patent: 3849216 (1974-11-01), Salters
patent: 4225877 (1980-09-01), Miles et al.
patent: 4327368 (1982-04-01), Uchida
Capece, R. P., "Older Processes Revamped as New Arrivals Extend Performance Limits" Electronics, pp. 109-115, Sep. 1979.
Ghafghaichi et al., "Complementary Bipolar FET Structure" IBM Tech. Discl. Bull., vol. 16, No. 6, pp. 1702-1703, Nov. 1973.
O. Minato, et al., "Buried J-FET Powered Static RAM Cell", Digest of Technical Papers: Eleventh Conference on Solid State Devices, Tokyo 159 (1979).
Edlow Martin H.
Tokyo Shibaura Denki Kabushiki Kaisha
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