Semiconductor device with no stress generated at the trench corn

Details Semiconductor device with no stress generated at the trench corn Semiconductor device with no stress generated at the trench corn

1988-03-17

1990-01-16

Hille, Rolf

Fishing, trapping, and vermin destroying

357 55, 357 49, 437 67, H01L 2978, H01L 2906, H01L 2712

Patent

active

048946958

ABSTRACT:
The semiconductor device in which no stress occurs at the corner portion of the trench comprises a p type semiconductor substrate having a trench and a main surface, a thick insulating film formed on the bottom portion of the trench, a thin insulating film formed on the sidewall portion of the trench and connected to the end portion of the thick insulating film, and an n type impurity region formed in the semiconductor substrate only on the side portion of the thin insulating film.

REFERENCES:
patent: 4740827 (1988-04-01), Niitsu et al.
patent: 4751557 (1988-06-01), Sunami et al.

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