Patent
1986-09-26
1988-06-21
Clawson, Jr., Joseph E.
357 22, 357 64, 357 86, H01L 2974
Patent
active
047528184
ABSTRACT:
A semiconductor device comprises two main electrode regions, i.e., cathode and anode regions consisting of high impurity concentration regions of opposite conductivity types, a low impurity concentration region locally formed between the two main electrode regions, a gate region, formed near the cathode region, for controlling a main current, a first local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region near at least one of the gate and cathode regions, and a second local region which has a relatively low carrier lifetime and is formed in a region of the low impurity concentration region which is depleted at the end of the main current turn-off process or which is not depleted to the end, thus satisfying three conditions, i.e., high-speed switching, low forward voltage drop, and high blocking voltage between the main electrodes at the same time.
REFERENCES:
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patent: 4281336 (1981-07-01), Sommer et al.
patent: 4620211 (1986-10-01), Baliga et al.
patent: 4656493 (1987-04-01), Adler et al.
Kushida Tomoyoshi
Nakamura Yoshio
Tadano Hiroshi
Clawson Jr. Joseph E.
Kabushiki Kaisha Toyota Chuo Kenkyusho
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