Semiconductor device with multiple power sources

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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Details

C327S540000, C327S143000

Reexamination Certificate

active

07030681

ABSTRACT:
Well bias voltages are generated in accordance with a logic power supply voltage and a memory power supply voltage. The transistor included in a control circuit in a memory core is constituted of a logic transistor manufactured through the same manufacturing steps as those for the transistors of a logic formed on the same semiconductor substrate. Well bias voltages (VBB, VPP) are applied to a back gate of this logic transistor. A memory integrated with a logic on a common semiconductor substrate is provided which allows a transistor of a control circuit therein to be manufactured through the same manufacturing process as that of the logic and allows reduction of current consumption.

REFERENCES:
patent: 5034625 (1991-07-01), Min et al.
patent: 5304859 (1994-04-01), Arimoto
patent: 5592430 (1997-01-01), Ohtsuki
patent: 6052022 (2000-04-01), Lee
patent: 6201437 (2001-03-01), Kono et al.
patent: 6320454 (2001-11-01), Pathak et al.
patent: 6472926 (2002-10-01), Taito et al.
patent: 2002/0011883 (2002-01-01), Yamazaki et al.
patent: 10-32259 (1998-02-01), None
patent: 2000-339958 (2000-12-01), None

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