Semiconductor device with multilayered metal pattern

Details Semiconductor device with multilayered metal pattern Semiconductor device with multilayered metal pattern

2007-12-25

2007-12-25

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S773000, C257S774000, C257S775000, C257S776000, C257SE21597

Reexamination Certificate

active

10945902

ABSTRACT:
A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.

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Chinese Office Action Issued in corresponding Chinese Patent Application No. CN 200410082604.1, dated Sep. 15, 2006.

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