Semiconductor device with multilayer base contact

Details Semiconductor device with multilayer base contact Semiconductor device with multilayer base contact

1989-08-22

1991-11-26

Hille, Rolf

357 67, 357 34, 357 59, 357 56, H01L 2348, H01L 2946, H01L 2904, H01L 2906

Patent

active

050687107

ABSTRACT:
On a semiconductor film to function as a lead-out electrode of a semiconductor element, a metal silicide film and a metal nitride film are successively provided, whereby alloying and inferior contact resistances attributed to heat during wiring with aluminum can be effectively suppressed, so that the reliability of a semiconductor device can be enhanced.

REFERENCES:
patent: 4477962 (1984-10-01), Godejahn, Jr.
patent: 4481706 (1984-11-01), Roche
patent: 4933737 (1990-06-01), Nakamura et al.

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