Semiconductor device with multi-layer leads

Details Semiconductor device with multi-layer leads Semiconductor device with multi-layer leads

1991-08-09

1993-10-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257755, H01L 2354

Patent

active

052508463

ABSTRACT:
A semiconductor device having multi-layered leads having a first lead portion including a polycrystalline silicon layer and a titanium silicide layer, and a second lead portion formed over the first lead portion and made up of a polycrystalline silicon layer. An intermediate insulating layer is provided between the first and second lead portions. The intermediate insulation layer and the underlying titanium silicide layer are provided with contact holes aligned with each other so as to allow the polycrystalline silicon of the second lead portion to be in direct contact with the polycrystalline silicon layer of the first lead portion without interposing therebetween the titanium silicide layer at the contact hole portion.

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