Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Patent
1994-08-26
1996-05-07
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
257628, 257324, H01L 2904, H01L 31036
Patent
active
055149049
ABSTRACT:
A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.
REFERENCES:
patent: 4642673 (1987-02-01), Miyamoto et al.
Hane, M., et al. "Atomic and Electronic Structures of an Interface Between Silicon and .beta.-Cristobalite", Physical Review B, vol. 41, No. 18. (1990). pp. 12637-12640.
Tiller, W. A., et al. "On the Kinetics of the Thermal Oxidation of Silicon" J. of Electro Society, vol. 128, No. 3, (1981). pp. 689-696.
Chelikowsky, J. R., et al. "Electron states in .alpha.-Quartz: A Self-Consistent Pseudopotential Calculation", Physical Review B, vol. 15, No. 8, (1977). pp. 4020-4029.
Hazama Hiroaki
Inoue Kouichirou
Matsushita Yoshiaki
Okada Takako
Okano Haruo
Hardy David B.
Kabushiki Kaisha Toshiba
Limanek Robert P.
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