Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase current gain or operating frequency
Patent
1998-06-26
1999-11-16
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase current gain or operating frequency
257587, 257592, H01L 2973
Patent
active
059863269
ABSTRACT:
A semiconductor device with a bipolar transistor that decreases the parasitic capacitance between a base connection layer and a collector region is provided. This device is comprised of a semiconductor substrate having a main surface, a collector region formed in the substrate, a base region formed in the substrate, an emitter region formed in the substrate, a first dielectric layer formed on the main surface of the substrate to be overlapped with the collector region, a conductive layer formed on the first dielectric layer and applied with a specific electric potential, a second dielectric layer formed to cover the conductive layer, a base connection layer formed on the second dielectric layer and electrically connected to the base region, and a base electrode electrically connected to the base connection layer. The emitter region, the base region, and the collector region constitute a bipolar transistor. The conductive layer serves as a shielding electrode that prevents a parasitic capacitance between the collector region and the base connection layer from occurring using the Faraday shielding effect.
REFERENCES:
patent: 5391905 (1995-02-01), Yamazaki et al.
patent: 5500554 (1996-03-01), Sato
patent: 5717227 (1998-02-01), Kim
Guay John
NEC Corporation
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