Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Reexamination Certificate
2006-01-19
2008-12-23
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
C257S664000, C257SE23024, C174S07100B
Reexamination Certificate
active
07468560
ABSTRACT:
A semiconductor device with micro connecting elements and method for producing the same disclosed. In one embodiment, the semiconductor device includes a number of micro connecting elements for the high-frequency coupling of components of the semiconductor device. The micro connecting elements have an at least three-layered structural form with a first layer of conducting material, a second layer of insulating material and a third layer of conducting material. In this configuration, the first and third layers and extend along a common center line and shield one another against electromagnetic interference fields. The first and third layers and are fixed on correspondingly adapted pairs of contact terminal areas of the components.
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Guengerich Volker
Theuss Horst
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Parekh Nitin
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