Semiconductor device with metallic precipitate and its manufactu

Details Semiconductor device with metallic precipitate and its manufactu Semiconductor device with metallic precipitate and its manufactu

1995-02-14

1996-09-24

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 18, 257 23, 257 24, 257 28, 257192, 257200, H01L 2906, H01L 310328

Patent

active

055593437

ABSTRACT:
A superlattice of LT-GaAs layers and another semiconductor layers such as LT-AlGaAs or HT-GaAs is grown on a substrate. Lattice imperfectness such as strain or crystal defects is selectively introduced. Then, the superlattice is annealed to produce As precipitates at selected locations of the LT-GaAs layers. When strain is given by metal electrodes, anisotropic etching and self-alined metal deposition can be done utilizing these electrodes. Various semiconductor devices, particularly SET devices can be manufactured utilizing those metallic precipitates.

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