Semiconductor device with memory effect

Details Semiconductor device with memory effect Semiconductor device with memory effect

1975-05-09

1977-02-01

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 3, 357 16, 357 30, 357 34, H01L 29205

Patent

active

040063666

ABSTRACT:
A semiconductor device including a heterojunction between an indirect semiconductor and a direct semiconductor of lower band gap which exhibits a notch-spike direct-indirect structure and circuit means for obtaining a current-voltage characteristic with two branches or limbs and switching from one branch to the other controlled by electron population in the direct notch.

REFERENCES:
patent: 3467896 (1969-09-01), Kroemer
patent: 3780359 (1973-12-01), Dumke et al.
patent: 3821784 (1974-06-01), Heald et al.
patent: 3927385 (1975-12-01), Pratt, Jr.
Milnes et al., Heterojunctions and Metal-Semiconductor Junctions, Academic Press, NY, 1972, p. 145.
Hovel, Def. Pub. of Ser. No. 441,712, filed 4-1972, Def. Pub. No. T934,008.

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